Transplanted magnetic random access memory (mram) devices on thermally-sensitive substrates using laser transfer and method of making the same

ABSTRACT

A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable material layer subject to rapid heating resulting in a predetermined high pressure, and transferring the memory device to the low-temperature substrate.

The present application is a Divisional Application of U.S. patentapplication Ser. No.: 10/459,517.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to magnetic memory devices, andmore particularly to MRAM devices, in which a magnetic tunnel junction(MTJ) device is transplanted onto a thermally-sensitive substrate.

2. Description of the Related Art

MRAMs are presently fabricated on Si for integration of magnetic tunneljunctions (MTJs) with complementary metal oxide semiconductor (CMOS)technology. MTJ devices can potentially provide nonvolatile, dense,high-performance storage elements. Lower performance applications ofMTJs, such as in “smart cards”, “wearable sensors”, and the like, wouldrequire fabrication of such MTJs on flexible, thermally-sensitivesubstrates, such as polymers and plastics. However, the thermal budgetrequired (e.g., between about 250 to about 400.degree. C.) duringprocessing of the MTJ devices precludes direct fabrication on thesesubstrate materials. That is, the processing of such devices are notcompatible with the low-temperature substrates.

Additionally, present day smart cards made of plastic have one or moresemiconductor chips, including memory, attached to a module embedded inthe card. Having the circuit directly imprinted or bonded to the cardwould make them more mechanically flexible, durable and lightweight.Cost is also an important factor for low performance application.Replacement of silicon chips with cheaper methods of fabricating memorycircuits on plastics would be preferred. However, prior to theinvention, no such method has been provided.

SUMMARY OF THE INVENTION

In view of the foregoing and other problems, drawbacks, anddisadvantages of the conventional methods and structures, a feature ofthe present invention is to provide a method and structure in whichapplications of magnetic memory devices (MRAM device arrays, MRAMstacks, MTJs, etc.) requiring fabrication of such devices (e.g., MTJsetc.) on flexible, standard (e.g., thermally-sensitive such aslow-temperature) substrates, such as polymers and plastics, is madepossible.

Another feature is to provide a structure and method in which the MTJdevice can be fabricated directly on such substrate materials.

In a first exemplary aspect of the present invention, a method offorming a magnetic memory device (and a resulting structure) on alow-temperature substrate, includes forming the memory device on atransparent substrate coated with a decomposable material layer subjectto rapid heating resulting in a predetermined high pressure, andtransferring the memory device to the low-temperature substrate.

In a second exemplary aspect of the present invention, a method ofmaking a magnetic tunnel junction (MTJ) device on a thermally-sensitivesubstrate, includes coating a transparent substrate, having a MTJ devicethereon, with a nitride material, and transferring the MTJ device to thelow-temperature substrate using a laser lift-off process.

In a third exemplary aspect of the present invention, a magnetic memorydevice, includes a transparent substrate having decomposable materialcoated thereon, a device formed on the transparent substrate, and alow-temperature substrate for receiving the device, after thedecomposable material is subjected to a predetermined high pressure.

In a fourth exemplary aspect of the present invention, a method offorming a magnetic memory device on a low-temperature substrate,includes forming a memory device on a transparent substrate coated witha nitride layer, applying a laser light to the memory device, to subjectthe nitride layer to pressure, and transferring the memory device to alow-temperature substrate.

Thus, with the unique and unobvious aspects of the present invention,magnetic memory devices (e.g., MRAM devices, MRAM stacks, MTJs, etc.)can be formed advantageously on low-temperature substrates such asplastics, polymers, and the like.

Fabrication of memory circuits for low performance applications usingthe inventive method can lead to lower cost, flexible, durable andlightweight plastic circuits with potential applications for manydevices, including smart cards and wearable sensors.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other purposes, aspects and advantages will be betterunderstood from the following detailed description of exemplaryembodiments of the invention with reference to the drawings, in which:

FIG. 1 illustrates an exemplary structure 100 according to an exemplaryembodiment of the present invention;

FIG. 2 illustrates the structure 100 after pulsed laser-induced transferof a magnetic memory device (e.g., an MRAM device array) to alow-temperature substrate, according to an exemplary embodiment of thepresent invention; and

FIG. 3 illustrates a method 300 of forming an MTJ device on athermally-sensitive substrate according to an exemplary embodiment ofthe present invention.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS OF THE INVENTION

Referring now to the drawings, and more particularly to FIGS. 1-3, thereare shown exemplary embodiments of the method and structures accordingto the present invention.

Exemplary Embodiment

As described below, in an exemplary embodiment of the invention, amethod of transplanting MTJ devices onto a standard (e.g.,thermally-sensitive) substrate is provided, in which an array of devicesfabricated, for example, on a transparent substrate (e.g., quartz,sapphire, etc.), are transferred using an exemplary laser lift-offprocess.

It is again noted that any substrate can be used so long as thesubstrate is transparent to laser light. That is, depending upon thesubstrate, an adequate wavelength of light would be found fortransmission. Sapphire is preferable since it transfers over a muchwider range of wavelengths.

Turning now to the Figures, and more specifically to FIG. 1, anexemplary MRAM device structure 100 is shown.

Structure 100 includes an underlying conductive (e.g., Cu or the like)wiring 110 along with an MTJ cell 120. The MTJ cell typically includes abottom contact electrode, a bottom magnetic layer, an oxidized Albarrier, a top magnetic layer and a top contact electrode.

The underlying conductive (e.g., Cu or the like) wiring 110 isfabricated on a transparent (e.g., sapphire, quartz, etc.; hereinaftersapphire will be assumed for exemplary purposes only) substrate 130,preferably coated with a thin blanket layer of nitride material 140. Thelayer of nitride material 140 preferably includes one or more nitridefilms selected from the group of gallium nitride, aluminum nitride orindium nitride and/or their alloys.

An insulating layer 160 (e.g., SiO.sub.2, SiN, SiON, SiONF and/or thelike) may be formed between the upper conductive (e.g., Cu) wirings 125by etching or the like. Additionally, the upper copper wirings 125 maybe formed on a conductive nitride material (e.g., TiN, TaN, WN, and/orthe like) or other conducting metal or oxide layer 170. Between the TiN170/MTJ stack 120 is preferably formed an insulating nitride material180 (e.g., SiN) or an insulating oxynitride (e.g., SiON).

It is known that laser irradiation of the surface of wide-gap InGaAlNfilms with above (or near)-band-gap photon energies results in themetallization of the nitride following the reaction:XN═X+1/2N.sub.2, where X represent Ga, Al, or In.

This has been used advantageously in demonstrating that GaN thin filmsgrown on the transparent (sapphire) substrate can be lifted-off from thesubstrate by metallizing the interface with a laser probe 150 incidentthrough the backside of the substrate (e.g., sapphire) 130.

This approach also has been extended to show that by using the GaN layeras a template to grow layers of Si, the metallization process can beutilized to lift off overgrown Si layers to be deposited onto arbitrarysubstrates. Efficient film transfer using AlN, InN and their alloys isalso expected.

Thus, FIG. 1 illustrates the application of the pulsed laser 150 appliedto the MRAM device array, fabricated on a transparent (e.g., sapphire)substrate 130 for transfer of the MRAM device array to a low-temperaturesubstrate (e.g., plastic, polymer, etc.) 190.

FIG. 2 illustrates the structure after pulse laser-induced transfer ofthe MRAM device array from the transparent substrate 130 to thelow-temperature substrate 190, has occurred. As shown, the magneticmemory (MTJ stack) has been formed on the plastic substrate.Additionally the decomposable material (e.g., the nitride material) hasdecomposed into its substituents via the release of nitrogen. Hence, inthe example shown in FIG. 2, there is an aluminum layer 195, andinterfacial layer 200 below the nitride material (e.g., AlN) 140.

Turning now to the method 300 of the invention, the decomposablematerial (e.g., nitride such as AlN, GaN, and/or InN, and their alloys,etc.) film is deposited on a transparent (e.g., sapphire, quartz, etc.)substrate (step 310). It is noted that the deposition can be performedat relatively low temperatures (e.g., room temperature or near roomtemperature). However, higher temperature could be employed (e.g., toabout for example, 250.degree. C.). Regardless of the host substrateused, it is important that the deposition temperature be below thetemperature at which the host substrate would begin to degrade ordelaminate.

It is noted that the nitride film should be of sufficient thickness sothat the laser light (e.g., depending upon the laser light used) isabsorbed in the nitride film. It is noted that some of the nitride mayremain on the MRAM after the transfer, and can be removed at that timeor left behind. That is, the nitride should not be so thin that the MRAMstack is damaged by the laser light being completely absorbed in theMRAM. Thus, preferably the nitride film has a thickness of about 100.ANG. to about 2000 .ANG.

In step 320, the magnetic memory device (e.g., MRAM arrays, MRAM stack,MTJs etc. depending upon the desired applications) along with theconductive (e.g., Cu. etc.) wiring are formed on top of the nitridesurface. The MRAM device arrays preferably are complete such thatsubstantially no further processing (or minimum processing) is requiredafter the transfer. That is, preferably, the MRAM device is completelyfabricated and processed on the sapphire substrate.

During the transfer process, the top copper wiring (with any additionalinsulating top layer) is mounted face down onto a low-temperature (e.g.,polymer or plastic) host substrate in very close proximity. It ispreferable to coat a thin layer of an elastomer material, such aspolydimethylsiloxane (PDMS) on the host substrate to enable intimatecontact between the two substrates during the transfer process. The twosurfaces can also be bonded using an epoxy or other mechanism.

In step 330, preferably a single pulse of laser radiation, preferablynear or above the band gap of the decomposable material (e.g., nitride),will result in a metallization of the interfacial nitride. It is notedthat the laser light may be a patterned beam of laser light on the orderof 200-400 mJ/cm.sup.2 (e.g., a fairly large beam) useful for the localtransfer.

As a result of such metallization, in step 340, the nitride/MRAMstructure will detach from the transparent (e.g., sapphire, quartz,etc.) and adhere to the host substrate (e.g., plastic, polymer, etc.).For the laser, preferably an excimer laser is employed, for producing apulse having a duration on the order of tenths of nanoseconds (or less).

Along these lines, a laser having a wavelength of 193 nm or 248 nm couldbe used. By the same token, any short pulse laser could be used, whichallows the light to be absorbed in the nitride material could be used.Thus, in a very short time period, the thin layer of nitride material isheated up and subsequently decomposed (e.g., broken up into itsconstituent elements). The debonding occurs due to the pressure build upwith the release of nitrogen from the nitride metallization.

It is noted that, by optionally rastering the laser beam, different MRAMarrays can be transferred using single pulses (step 350).

Additionally, by optionally growing an Si layer on top of the nitride(step 360), depending upon the geometry involved, the MRAM devices canalso be integrated with transistors to control operation of the cells,which are then be transferred simultaneously. The silicon layer can beepitaxial, polycrystalline, or amorphous depending on the growthtemperature of the silicon and the underlying nitride material.Epitaxial-quality wide band gap nitrides can be grown on sapphire.Subsequent growth of silicon on this nitride layer will be substantiallysingle crystal in nature and of better crystalline quality than theamorphous or polycrystalline silicon. Thus, transistors fabricated inthe grown silicon with the MRAM devices on top can be transferred at thesame time.

Alternatively, optional organic transistors can be fabricated on thehost substrate (e.g., the low-temperature substrate such as plastic,polymer, etc.) prior to transfer of the MRAM arrays (step 370) andinterconnected with the transferred MRAM structure.

After the transfer process, optionally (e.g., depending on thedesigner's requirements) the overlying nitride layer can be etched awayusing established dry or wet etching techniques (step 380).

An issue of the inventive laser transfer process is the temperature riseof the MRAM structure and also that of the host substrate. Thetemperature rise can be estimated based on the known thermodynamic andthermal properties of the nitride film and the sapphire substrate.

For example, for an energy fluence of .about.300 mJ/cm.sup.2 from anexcimer laser at 248 nm, the maximum temperature rise at a distance of0.5 .mu.m is about 150.degree. C. for conduction through sapphire (andabout 350.degree. C. for conduction through quartz). The temperature israpidly quenched to below 100.degree. C. (within 0.1 .mu.s) for the caseof sapphire. Thus, the temperature rise is not very severe, and can becontrolled by the thickness of the nitride layer.

Thus, the invention provides a method (and resulting structure) in whicha magnetic memory device (e.g., MRAM device array, MRAM stack, MTJ cell,etc.) is formed on a substrate transparent to laser light, with a thinnitride layer on the bottom which absorbs the laser light and whichdecomposes due to the high pressure, etc., thereby facilitating thetransfer of the MRAM device array to a low-temperature substrate.

While the invention has been described in terms of several exemplaryembodiments, those skilled in the art will recognize that the inventioncan be practiced with modification within the spirit and scope of theappended claims.

Further, it is noted that Applicant's intent is to encompass equivalentsof all claim elements, even if amended later during prosecution.

Transplanted magnetic random access memory (MRAM) devices onthermally-sensitive substrates using laser transfer and method formaking the same.

1. A magnetic memory device, comprising: a transparent substrate havingdecomposable material coated thereon; a device formed on saidtransparent substrate; and a low-temperature substrate for receiving thedevice, after the decomposable material is subjected to a predeterminedhigh pressure.
 2. The magnetic memory device of claim 1, wherein saiddevice comprises a first conductive wiring, a magnetic tunnel junction(MTJ) coupled to said first conductive wiring, and a second conductivewiring fabricated on the transparent substrate.
 3. The magnetic memorydevice of claim 1, wherein said decomposable material comprises anitride material.
 4. The magnetic memory device of claim 3, wherein saidnitride material comprises Gallium nitride.
 5. The magnetic memorydevice of claim 3, wherein said nitride material comprises Aluminumnitride.
 6. The magnetic memory device of claim 3, wherein saiddecomposable material has a thickness between about 100 .ANG. to about2000 .ANG.
 7. The magnetic memory device of claim 3, wherein the nitridematerial includes one or more nitride films comprising at least one ofgallium nitride, aluminum nitride, indium nitride and their alloys.